Processes
Deposition
Process | Description |
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Thermal Oxidation | |
Chrome thin film |
Chrome RF sputter deposition. dep rate= 9.4nm/min, power=400W RF, pressure=10mT Argon, substrate height =120 |
Gold thin film | Thin films of gold can be deposited via sputtering or evaporation. Ebeam and resistive thermal evaporation are available. |
Aluminum thin film | Thin films of aluminum can be deposited via sputtering or evaporation. |
Titanium thin film | Thin films of titanium can be deposited via sputtering. |
Silicon Dioxide thin film | Thin films of silicon dioxide can be deposited via sputtering. |
Iron thin film | Thin films of iron can be deposited via sputtering. |
Permalloy thin film | Thin films of permalloy can be deposited via sputtering. |
Amod Evaporator Operation | |
Nickel E-beam Evaporation | Nickel thin films can be deposited via electron beam evaporation using a vitreous carbon crucible liner in the Angstrom Amod Evaporator. |
Aluminum Thin Film (Evaporation) |
Aluminum thin films can be deposited via electron beam evaporation using a infiltrated
carbon crucible liner in the Angstrom Amod Evaporator. |
Alumina Thin Film (Evaporation) | Alumina thin films can be deposited via electron beam evaporation in the Angstrom Amod Evaporator. |
Chrome Thin Film (Evaporation) | Chrome thin films can be thermally evaporated in the Angstrom Amod Evaporator. |
Silicon Dioxide Thin Film (Evaporation) | Silicon Dioxide thin films can be deposited via electron beam evaporation in the Angstrom Amod Evaporator |
Indium Tin Oxide (Evaporation) | Indium Tin Oxide can be deposited via electron beam evaporation in the Angstrom Amod Evaporator. |
Creating A Single-Layer Process and Parameters Explanation |
Single-Layer Process Setup
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Etching
Process | Description |
---|---|
Cryogenic etch | Low temperature silicon etch for high aspect ratio features |
O2 Descum | Microwave plasma O2+Ar slow ashing process used to remove residual photoresist. |
Bulk Silicon etch |
A process for anisotropic bulk etching of silicon wafers is available at MMF. A dedicated
temperature controlled bath with a cooled lid is located in the Base/Litho bench.
This bath has 0.1C temperature control and features a coolant loop around the bath
lid acting as a condenser, preventing loss of etchant thereby maintaining etchant
concentration. |
R1 S1813 on Si ashing |
No faraday cage; wafer in vertical position, centered in chamber 1.3um S1813 on 100mm Silicon wafer |
R2 S1813 on Al Ashing |
With faraday cage; wafer in vertical position, centered in chamber 1.3 uM S1813 on 100 mm Aluminum coated Silicon wafer |
R3 S1813 on Si Descum |
With faraday cage, wafer in vertical position, centered in chamber. 1.3 uM S1813 on 100 mm Silicon wafer. 2 min descum removes 45 +/- 6 nm |
R4 S1813 on Al Descum |
With faraday cage; wafer in vertical position, centered in chamber. 1.3 uM S1813 on Al coated Si wafter 4 min descum removes 21 +/- 15 nm |
Alumina Dry Etch Recipe |
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Chromium Dry Etch Recipe |
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Silicon Dioxide Dry Etch Recipe |
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Aluminum HBr Dry Etch Recipe |
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Aluminum Cl2 Dry Etch Recipe |
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Lithium Niobate Dry Etch Recipe |
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Lithography
Process | Description |
---|---|
Shipley SPR 1813 exposure | Resist exposure time |
HMDS coating |
Two methods to apply HMDS coating on: 1. YES Vapor Prime Oven protocol coat 2. 20% HMDS spin coating with the following recipe:
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Spin Coating | Load wafers in YES LP-III vapor prime oven and press start |
AZ 400T photoresist stripping | AZ 400T is an organic solvent based photoresist stripper. This stripper is optimized to remove organic etch residue as well as remaining photoresist after plasma processing. |
Contact Aligner Operation |
Operating the contact aligner:
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Headway Spinner Operation |
Headway Spinner Bench
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Brewer Spinner Operation |
Brewer Spinner Bench
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Shipley S1813 on Aluminum |
Photolithographic Process for S 1813 Positive Photoresist on Al Coated Si Wafer
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AZ 1512 Photoresist on Silicon (Si) |
Photolithographic Process for AZ 1512 Positive Photoresist on Bare Silicon Wafer
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AZ 3312 Photoresist on Silicon |
Photolithographic Process for AZ 3312 Positive Photoresist on Bare Silicon Wafer
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AZ 3312 Photoresist on Al |
Photolithographic Process for AZ 3312 Positive Photoresist on Aluminum Coated Substrates
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AZ 3312 Photoresist on Cr |
Photolithographic Process for AZ 3312 Positive Photoresist on Chromium Coated Substrates
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Shipley S1813 on Silicon |
Photolithographic Process for S 1813 Positive Photoresist on Bare Silicon Wafer
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Shipley S1805 on Silicon |
Photolithographic Process for S 1805 Positive Photoresist on Bare Silicon Wafer
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KMPR 1010 on Glass Wafer | Procedure for KMPR 1010 photoresist |
Miscellaneous
Process | Description |
---|---|
Step Height thickness measurement | Step heights from 50A to 400um can be made using a computer controlled stylus profilometer. The stylus force can be adjusted so polymers samples such as photoresist can be measured. |
Spin Dryer Operation |
SEMITOOL SPD015
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Wafer grip removal |
To release wafers bonded using Dyantex wafergrip a specialized solvent called Stripaid
is used. An attached PDF provides process detail for the use of this solvent. Be aware
that the order of steps is very important, acetone evaporates quickly so a fast transfer
into 2-proponal (isoproponal) is crucial, else residue may dry on the substrate that
will prove difficult to remove. |
Shield Change for Amod Evaporator |
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Wetbenches
Process | Description |
---|---|
RCA clean for oxidation/diffusion | The oxidation/diffusion clean for silicon wafers consist of three chemical baths. SC1 for residual organics, SC2 for metal impurities and HF dip to remove any native oxide. |