Photolithographic Process for S 1813 Positive Photoresist on Al Coated Si Wafer

  1. Clean Al Coated Wafers
    1. Heat AZ KWIK Strip Remover to 60 °C.
    2. When bath is at temperature, place wafer in dish and start 10 minute timer.
    3. When time is complete, take wafer out of KWIK Strip and wash off with deionized water. Blow dry with nitrogen gun.
  2. Dehydration Bake
    1. Place cleaned Al coated Si wafer on vacuum hot plate, and perform a dehydration bake for 10 minutes at 150 °C. Let the wafer cool to room temperature after bake.
  3. Spin Coat Wafers with S 1813.
    1. When wafer reaches room temperature, load a wafer on a prepped Headway or Brewer spin coater.
    2. Choose the proper recipe, recipe 5 for the Headway spinner and recipe 6 for the Brewer spinner, and press start. Resist spun at 5000 rpm to give a thickness of about 1.35 µm.
    3. Dispense S 1813, about 6 mL per wafer, during the spin coating.
  4. Soft Bake
    1. Soft bake for 1 minute at 115 °C on a vacuum hot plate.
  5. Expose Wafer in the Contact Aligner
    1. Expose for 2.7 seconds without any filter for optimum exposure dose. Channel A of the contact aligner is set at 15 mW/cm2.
  6. Develop Wafer
    1. Develop wafer for 45 seconds in AZ 726 MIF Developer.
    2. Wash with deionized water to completely remove developer, and blow dry with nitrogen gun.
  7. Hard Bake
    1. Hard bake for 3 minutes at 100 °C on a vacuum hot plate.
Cross Section of S1813 on Al coated Si waferFace view of 1 µm lines of S1813 on Al coated Si waferFace view of 1.5 µm lines of S1813 on Al coated Si wafer

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Attached Documents

  • application/pdf iconS1813 Process on Al.pdf