The Alumina etch utilizes a C4F8, CHF3 and Ar chemistry to slowly etch away the resistant
alumina film.
The Oxford ICP 100 etcher is used with this chemistry and the etch rate has been measured
to be about 50 nm/min
This gas chemistry will etch Si, so be sure to stop fairly quickly after the alumina
is completely etched.
Surface roughness seems to vary on etch time. Be sure to measure with the Ambios Profilometer
Attached Documents
Alumina Etch Recipe.pdf
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