The Oxford Plasmalab ICP 100 etcher utilizes an etch chemistry of C4F8 and oxygen
to etch the silicon dioxide while stopping quite well on microscope glass and Si.
The etch rate has been measured to be about 300 nm/min.
Attached Documents
Silicon Dioxide Etch Recipe.pdf
Facility Manager: Dr. Andrew Lingley Montana State University 518 Cobleigh Hall Bozeman, MT 59717 Phone: (406) 994-2518 Email: andrew.lingley@montana.edu
Facility Director: Dr. David Dickensheets Montana State University 530 Cobleigh Hall Bozeman, MT 59717 Phone: (406) 994-7874 Email: davidd@montana.edu
Student Offices: 111 Barnard Hall Phone: (406) 994-3112
Silicon Dioxide Etch Recipe.pdf