PVA Tepla Ion 10
Description
The PVA Tepla IoN Wave 10 is a batch-mode plasms system primarily used for stripping resist, cleaning, and surface pretreatment.
Processes
O2 Descum
- Microwave plasma O2+Ar slow ashing process used to remove residual photoresist.
R1 S1813 on Si ashing
- No faraday cage; wafer in vertical position, centered in chamber
1.3um S1813 on 100mm Silicon wafer
Ash time 4 min
R2 S1813 on Al Ashing
- With faraday cage; wafer in vertical position, centered in chamber
1.3 uM S1813 on 100 mm Aluminum coated Silicon wafer
36 minute ash
R3 S1813 on Si Descum
- With faraday cage, wafer in vertical position, centered in chamber.
1.3 uM S1813 on 100 mm Silicon wafer.
2 min descum removes 45 +/- 6 nm
R4 S1813 on Al Descum
- With faraday cage; wafer in vertical position, centered in chamber.
1.3 uM S1813 on Al coated Si wafter
4 min descum removes 21 +/- 15 nm