Photo of PVA Tepla Ion 10

Description

The PVA Tepla IoN Wave 10 is a batch-mode plasms system primarily used for stripping resist, cleaning, and surface pretreatment.

 

Processes

O2 Descum

  • Microwave plasma O2+Ar slow ashing process used to remove residual photoresist.

R1 S1813 on Si ashing

  • No faraday cage; wafer in vertical position, centered in chamber

1.3um S1813 on 100mm Silicon wafer

Ash time 4 min

R2 S1813 on Al Ashing

  • With faraday cage; wafer in vertical position, centered in chamber

1.3 uM S1813 on 100 mm Aluminum coated Silicon wafer
36 minute ash

R3 S1813 on Si Descum

  • With faraday cage, wafer in vertical position, centered in chamber.

1.3 uM S1813 on 100 mm Silicon wafer.

2 min descum removes 45 +/- 6 nm

R4 S1813 on Al Descum

  • With faraday cage; wafer in vertical position, centered in chamber.

1.3 uM S1813 on Al coated Si wafter

4 min descum removes 21 +/- 15 nm