Deposition
| Process | Description | 
|---|---|
| Thermal Oxidation | |
| Chrome thin film | Chrome RF sputter deposition. dep rate= 9.4nm/min, power=400W RF, pressure=10mT Argon, substrate height =120 | 
| Gold thin film | Thin films of gold can be deposited via sputtering or evaporation. Ebeam and resistive thermal evaporation are available. | 
| Aluminum thin film | Thin films of aluminum can be deposited via sputtering or evaporation. | 
| Titanium thin film | Thin films of titanium can be deposited via sputtering. | 
| Silicon Dioxide thin film | Thin films of silicon dioxide can be deposited via sputtering. | 
| Iron thin film | Thin films of iron can be deposited via sputtering. | 
| Permalloy thin film | Thin films of permalloy can be deposited via sputtering. | 
| Amod Evaporator Operation | |
| Nickel E-beam Evaporation | Nickel thin films can be deposited via electron beam evaporation using a vitreous carbon crucible liner in the Angstrom Amod Evaporator. | 
| Aluminum Thin Film (Evaporation) | Aluminum thin films can be deposited via electron beam evaporation using a infiltrated
                                          carbon crucible liner in the Angstrom Amod Evaporator. | 
| Alumina Thin Film (Evaporation) | Alumina thin films can be deposited via electron beam evaporation in the Angstrom Amod Evaporator. | 
| Chrome Thin Film (Evaporation) | Chrome thin films can be thermally evaporated in the Angstrom Amod Evaporator. | 
| Silicon Dioxide Thin Film (Evaporation) | Silicon Dioxide thin films can be deposited via electron beam evaporation in the Angstrom Amod Evaporator | 
| Indium Tin Oxide (Evaporation) | Indium Tin Oxide can be deposited via electron beam evaporation in the Angstrom Amod Evaporator. | 
| Creating A Single-Layer Process and Parameters Explanation | Single-Layer Process Setup 
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