The Oxford Plasmalab ICP 100 uses a gas chemistry of chlorine for the initial aluminum
oxide breakthrough and then HBr gas to etch the Al.
The etch rate has be measure at about 1075 nm/min for a thick film of Al with a thickness
of 2.7um.
This gas chemistry will etch Si so silicon dioxide is needed to stop the etching beneath
the Al.
Attached Documents
Aluminum HBr Etch Recipe.pdf
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Aluminum HBr Etch Recipe.pdf